Allwin21 AW-1000 Features:

• Designed with III-V Production in mind!
• Controller with Touchscreen GUI and PentiumⓇ Grade PC.
• Allwin21 Advanced Controller Software with PSUM technology to PREVENT MIS-PROCESSING.
• The 3-axis wafer transport robot installed:
  • Superior than Gasonics Aura 1000 design that’s synonymous for wafer breakage and constant alarms/errors.
  • INCREASED THROUGHPUT
  • Receive cassette station can be substituted with a Cooling/Alignment station to prevent wafer breakage.
• NO OBSOLETE PARTS.
• Closed Loop Temperature Control (CLTC) temperature control for heating wafers up to 350°C  (± 2 – 5°C) using our proprietary RTP technology for BETTER PROCESS REPEATABILITY.
• BETTER UNIFORMITY by using three 1kW lamps.
• Option to run two different wafer sizes without any hardware changes.

Specifications:

• Downstream Plasma.  <0.1V CV-Shift NO ELECTRICAL DAMAGE to product.
• Front and Backside isotropic photoresist removal.
• Bulk Ash/Strip Rate:
  • Positive Photoresist = 2µ – 5µ / min
  • Negative Photoresist = >8µ / min
• 1000W Microwave Power (1.25kW w/ Variable MW Power option available)
• Small footprint.  32″w  x  32″d  x  64″h
• 75mm – 150mm wafer capability.
• Up to 4 MFC’s.
• End-of- Process (EOP) process endpoint detection.
• Pressure control.
• GEM/SECSII (option).
• Floor or Through-the-wall design.

Typical Recipe Parameters:

• Pressure = 1.75 to 2.5 Torr
• Microwave = 1000W
  

  

• Gas Flow:
  • 02 4.5 SLPM
  • N2 0.5 SLPM
• Variable Lamp Time = 0-9999 seconds (AW SW)
• Variable Temperature = 150°C – 350°C

Facilities:

• Vacuum Chamber Pump = 165 cfm
• Cabinet Exhaust = >250 cfm
• Plumbed Gases:
  • O2
  • N2
  • Forming Gas for metal wafers. (Optional)
  • Ar – for Metal wafer surface clean. (Optional)
• Electrical Requirements: 208VAC, 3-Phase, 60Hz, 30Amps
• Water Cooling only if “Variable MW Power Control” option is installed.
• Weight = 350lbs.